THE ROLE OF DOPING IN X-RAY SENSING WITH SOLUTION-GROWN CADMIUM IODIDE

Abstract

This study investigates the impact of doping on the X-ray sensing capabilities of solution-grown cadmium iodide (CdI2) crystals. Various dopants, including indium (In), thallium (Tl), and bismuth (Bi), were incorporated into CdI2 crystals during the solution growth process. The structural, optical, and electrical properties of the doped crystals were characterized using X-ray diffraction (XRD), UV-Vis spectroscopy, and current-voltage (I-V) measurements. X-ray sensing performance was evaluated by measuring sensitivity, response time, and stability under different radiation doses. Results indicate that doping significantly enhances the X-ray sensing properties of CdI2 crystals, with Bi-doped samples exhibiting the highest sensitivity and fastest response times. This research provides valuable insights into the optimization of CdI2-based X-ray detectors through controlled doping, paving the way for improved medical imaging and security screening applications.